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TPC8A02-H
OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS )
TPC8A02-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
* * * * * * * Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) High-speed switching. Small gate charge.: QSW 11 nC(Typ.) Low drain-source ON-resistance: RDS (ON) = 4.3 m (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 20 16 48 1.9 1.0 166 16 0.11 150 -55 to 150 Unit V V V A W W mJ A mJ C C
1,2,3 4 5,6,7,8 JEDEC JEITA TOSHIBA
SOURCEANODE GATE DRAINCATHODE 2-6J1B
Weight: 0.085 g (typ.)
Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
Circuit Configuration
8 7 6 5
1
2
3
4
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care. Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage combined with improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration during design.
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Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit C/W C/W
Marking (Note 5)
TPC8A02 H
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25, IAR = 16 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture (01 for the first week of the year: continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd Qsw VDD 24 V, VGS = 10 V, ID = 16 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 VGS 10 V 0V RL = 1.88 ID = 8 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 8 A VGS = 10 V, ID = 8 A VDS = 10 V, ID = 8 A Min 30 15 1.1 20 VOUT 14 12 26 34 19 6 8.4 11 ns nC Typ. 6.2 4.3 40 1970 240 950 6 Max 10 100 2.3 8.5 5.6 pF Unit A A V V m S
Duty < 1%, tw = 10 s =
VDD 15 V -
VDD 24 V, VGS = 10 V, ID = 16 A - VDD 24 V, VGS = 5 V, ID = 16 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Peak forward current Pulse (Note 1) Symbol IFP Test Condition IDR = 1.0 A, VGS = 0 V IDR = 16 A, VGS = 0 V Min Typ. -0.45 Max 48 -0.6 -1.2 Unit A
Forward voltage (diode)
VDSF
V
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TPC8A02-H
ID - VDS
20 10 8 4 4.5 3.6 3.5 Common source Ta = 25C Pulse test 3.4 50 4 3.9
ID - VDS
3.8 Common source Ta = 25C Pulse test 3.7 3.6
Drain current ID (A)
Drain current ID (A)
16
6 5
40
10 6
12 3.3 8
30
5 4.5
3.5 3.4
3.2
20
4
VGS = 3 V
10
VGS = 3.2 V
0
0
0.2
0.4
0.6
0.8
1.0
0
0
1
2
3
4
5
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
50
VDS - VGS
0.20
Drain current ID (A)
40
Drain-source voltage VDS (V)
Common source VDS = 10 V Pulse test
Common source Ta = 25C Pulse test
0.16
30 100 20 25 10 Ta = -55C
0.12
0.08
ID = 16 A
0.04
8 4
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID (S)
100
RDS (ON) - ID
100 Common source Ta = 25C Pulse test
Forward transfer admittance |Yfs|
10
Ta = -55C
100 25
Drain-source ON-resistance RDS (ON) (m)
10
VGS = 4.5 V
1 Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100
10
1 0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
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RDS (ON) - Ta
12
IDR - VDS
1000
Drain reverse current IDR (A)
Common source Pulse test
Drain-source ON-resistance RDS (ON) (m)
ID = 4A,8A,16A 8 VGS = 4.5 V ID = 4A,8A,16A
100 5 10 10 VGS = 0 V 1 Common source Ta = 25C Pulse test 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 4.5
4
VGS = 10 V 0 -80
-40
0
40
80
120
160
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
Capacitance - VDS
10000 3
Vth - Ta Gate threshold voltage Vth (V)
(pF)
Ciss 1000 Coss
Capacitance C
2
Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 100
1
0 -80
Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160
Drain-source voltage VDS
(V)
Ambient temperature
Ta
(C)
PD - Ta
2 (1)
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s
Dynamic input/output characteristics
32
Drain power dissipation PD (W)
Drain-source voltage VDS
1.6
24
VDS
12
1.2 (2) 0.8
VDD = 24 V 16 8
8 VGS
4
0.4
0 0
40
80
120
160
0 0
10
20
30
0 40
Ambient temperature Ta
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
VGS (V)
Common source ID = 16 A Ta = 25C Pulse test
16
(V)
TPC8A02-H
rth - tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2)
Transient thermal impedance rth (/W)
100
(1)
10
1
Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
Safe operating area
1000
100
(A)
ID max (Pulse) * t =1 ms *
Drain current ID
10
10 ms *
1 *
Single - pulse Ta = 25C
Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100
Drain-source voltage VDS
(V)
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IDR - VDSF
100
IDSS - Tch
100000 Pulse test VGS = 0 V 10000 VDS = 20 V
(typ.)
VGS = 0 V
Drain cutoff current IDSS (A)
Pulse test
(A)
VDS = 10 V
Drain reverse current IDR
10
125 75
VDS = 30 V 1000
VDS = 5 V
Ta = 25C 1
100
0.1 0
0.2
0.4
0.6
0.8
1
10 0
40
80
120
160
Drain-source voltage VDSF
(V)
Channel temperature
Tch (C)
Tch - VDS
160
Tch (C)
Pulse test VGS = 0 V
120
Channel temperature
80
40
0
0
10
20
30
40
Drain-source voltage VDS
(V)
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TPC8A02-H
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